Clean Room (MNCR)

RCA Wet Bench

The RCA wet bench is dedicated to CMOS compatible substrates only.  It is capable of up to 8” wafer processing and is solely used in conjunction with RCA chemistries.

CMOS-compatible samples only. 

PlasMod O2 Asher

The PlasMod is a compact oxygen plasma asher capable of processing up to 4” diameter samples.  A direct oxygen based RF plasma is used for multiple applications ranging from photoresist stripping, organic cleaning, and surface modification.

PlasmaTherm RIE

The PlasmTherm system has one chamber dedicated to RIE processing.  Standard recipes are supplied for semiconductor material etching using fluorinated chemistries including SF6, CHF3, and CF4.  The chamber can accommodate samples up to 8” in diameter. 

No toxics. 

PlasmaTherm PECVD

The PlasmTherm system has one chamber dedicated to PECVD processing.  Standard recipes include silicon dioxide and silicon nitride depositions at a nominal operating temperature of 300C and 250C respectively.  The chamber can accommodate samples up to 8” in diameter.  Maximum film thickness top out at about 1um.   

No volatiles or toxics allowed. 

PicoSun Atomic Layer Deposition

The PicoSun ALD system is capable of running in both thermal and plasma enhanced mode.  The sample holder can accept up to 8” wafers and has a maximum operating temperature of 400C although many processes are enabled at significantly lower temps.  It’s configured for up to five precursor reagents and 3 plasma gases (N2, H2, and O2).  Maximum film thicknesses are typically less than 0.5um.  

No volatiles or toxics allowed. 

Parylene Coater

The parlyene system deposits a highly conformal polymeric coating on any exposed sample surfaces.  The film thickness can be controlled from a few nanometers to multiple microns.  It’s commonly used as a vapor/permeation barrier and hydrophobic coating.  It is also well known for being biologically inert.

 

OAI Contact Aligner

The OAI contact aligner is broadband mid-UV exposure tool.  It can expose samples ranging in size from small pieces up to 8” wafers.  It has a dual optic alignment system capable of ~1um in mask to frontside overlay and ~20um in backside to frontside sample overlay.  Image size reproducibility is limited to 1um.

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