Deposition
The Applied Materials P5000 has two dedicated chambers for dielectric PECVD. One utilizes a TEOS/O2 chemistry for silicon dioxide and the other is SiH4/NH3 capable for silicon nitrides. Both can process up to 8” wafers and deposit films multiple microns thick. Nominal operating temperature is ~400C.
No volatiles, toxics, glass or metals without staff permission.
Facility